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HIVE INF
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ARCHIVE INFORMATION
6
RF Device Data
Freescale Semiconductor
MRF5S9150HR3 MRF5S9150HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
100
?90
?10
Pout, OUTPUT POWER (WATTS) PEP
?30
?40
?50
?60
400
IMD, INTERMODULATION DISTORTION (dBc)
VDD
= 28 Vdc, I
DQ
= 1500 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two?Tone Measurements
?20
1
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1 10010
?60
0
7th Order
TWO?TONE SPACING (MHz)
5th Order
3rd Order
?20
?30
?40
IMD, INTERMODULATION DISTORTION (dBc)
?10
0.1
VDD
= 28 Vdc, P
out
= 150 W (PEP)
IDQ
= 1500 mA, Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Figure 9. Pulse CW Output Power versus
Input Power
41
61
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 1500 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
59
57
53
45
29 3331
Actual
Ideal
55
25
P
out
, OUTPUT POWER (dBm)
27
P3dB = 53.84 dBm (242.1 W)
P1dB = 52.87 dBm (193.64 W)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
0
?80
Pout, OUTPUT POWER (WATTS) AVG.
60
?20
40
?40
30
?50
20
?60
?70
110100
10
VDD= 28 Vdc, IDQ
= 1500 mA
f = 880 MHz, N?CDMA IS?95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
Gps
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ηD
ACPR
ALT1
TC
= ?30
C
C
25C
300
85
?70
7th Order
5th Order
3rd Order
?80
10
?50
51
49
47
35 37 39
P6dB = 54.52 dBm (283.14 W)
50
C
?30
25
?30C
?30C
85C
85C
25C
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